LED light source, LED light source manufacturing method, and direct display device thereof

ABSTRACT

Disclosed are an LED light source, an LED light source manufacturing method, and their direct display device. The LED light source includes a base, at least an LED chip, an anti-vulcanization structure, a light excitation structure, an encapsulation structure and a protection structure. The LED light source can overcome catalyst poison or vulcanization of the light-emitting material effectively to improve product yield and reliability of the LED light source. In the meantime, the LED light source has the feature of a better light emission performance.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional patent application of U.S. applicationSer. No. 16/055,277 filed on Aug. 6, 2018, the entire contents of whichare hereby incorporated by reference for which priority is claimed under35 U.S.C. § 120.

FIELD OF INVENTION

The present disclosure relates to the field of light emitting diodes(LEDs), in particular to an LED light source, an LED light sourcemanufacturing method, and their direct display device capable ofimproving the yield of packaging and having excellent anti-moisture,anti-oxidation, and anti-vulcanization effects.

BACKGROUND OF INVENTION Description of the Related Art

As technologies advance, Light Emitting Diode (LED) is used extensivelyin light source products, and related manufacturers constantly conductresearch and development to improve the performance, efficiency andservice life of the LED.

A conventional LED 9 generally comprises an LED chip 91 installed on abase 90 and a light-emitting material 92 provided for packing the LEDchip 91 to form a light emitting source for the purpose of illuminationand display. After the light of the chip and the light formed byexciting the light-emitting material are mixed, the required light suchas a white light is formed as shown in FIG. 11. According to thedifference of output requirements, the selected light-emitting materialpackaged into the LED varies. In general, an LED light source used fordisplays requires the use of a light-emitting material with a narrowerhalf-wavelength width to improve the color purity of the display devicein order to provide a display with a wider color gamut.

Regardless of the LED applications, the color temperature, colorrendering index, color gamut/color saturation, and light emissionbrightness of the LED have their defined specifications. Therefore,related manufacturers design and develop the aforementioned componentsto provide a more superior LED with better performance. For example,R.O.C. Pat. Publication No. 1453957 has disclosed a technology of usinga glass encapsulator to cover the top of a substrate instead, andseparating the LED chip from the glass encapsulator to produce an LEDlight source with better performance. Further, R.O.C. Pat. PublicationNo. 1586001 has provided an ultraviolet LED package structurespecifically for the focusing on the ultraviolet LED having nolight-emitting material to provide a filler for a reflective housing,wherein the filler is an UV resistant inorganic material, so that theultraviolet provides a high reflectivity and the ultraviolet LED packagestructure has the features of good performance and lower cost.

In addition, the light-emitting material packaged in the LED usually hasthe following problems. Since most light-emitting materials generallyuse metal ions as an activator, and the metal ions may be oxidized veryeasily when they are in contact with water, and water or oxidation maychange the valence of the metal ions, so that the fluorescent powderloses the light excitation function. For example, the original ion Eu²⁺is changed into Eu³⁺, and the ion valence is incorrect, or the lightemitting quantum dot material is reacted with water and oxygen, and thenanostructure is changed into the microstructure, so that thelight-emitting material excited by the LED chip will not emit light, andthe light-emitting material loses the light excitation function, and theLED cannot provide the required light successfully.

In actual practices, the light-emitting material packaged into the LEDis affected by composition besides the aforementioned LED package andproduction problems. In a conventional LED packaging process, the metalreflective layer of LED may become black and lose the light reflectionfunction, and the brightness of the LED light source drops. On the otherhand, the packaging material contacted with the light-emitting materialalso has a catalyst poison, so that when the packaging material is bakedand cured, the catalyst poison material and the packaging material willbe volatilized, and the packaging material will be poisoned, hardenedand incomplete. Obviously, the conventional LED technology still cannotovercome the aforementioned drawbacks effectively.

In view of the aforementioned drawbacks, the disclosurer of thisdisclosure provides an LED light source, an LED light sourcemanufacturing method and their direct display device, in hope ofovercoming the issues of the blackening and catalyst poisoning of thelight-emitting material to improve the service life and light outputperformance of the LED light source.

SUMMARY OF THE INVENTION

Therefore, it is a primary objective of the present disclosure toprovide an LED light source, an LED light source manufacturing method,and their direct display device, and such disclosure can overcome theaforementioned issues of the catalyst poison or vulcanization of thelight-emitting material effectively to improve the product yield andreliability of the LED light source, and the LED light source has thefeature of a better light emission performance.

To achieve the aforementioned and other objectives, the presentdisclosure provides an LED light source comprising: a base, having anupper edge, a light emitting region formed and enclosed by the upperedge, an inner mounting surface concavely formed on the base andinwardly along the upper edge, and a reflective layer disposed on theinner mounting surface; at least an LED chip, installed at a bottomposition of the inner mounting surface by a flip chip method; ananti-vulcanization structure, continuously and uninterruptible formed onthe reflective layer and a surface of the LED chip; a light excitationstructure, including at least a fluorescent powder containing an elementselected from the group consisting of sulfur, lead, and phosphorus, andthe light excitation structure being disposed in the base; anencapsulation structure, disposed in the base and provided for packagingthe light excitation structure and the LED chip into the base, and theanti-vulcanization structure isolating the reflective layer and the LEDchip from directly contacted with the encapsulation structure, and theencapsulation structure being made of organic silicone and containing aplatinum catalyst; and a protection structure, installed to the base bya dispensing method and covering the encapsulation structure; whereinthe encapsulation structure has a hardness lower than the hardness ofthe protection structure. The complete protection provided by theanti-vulcanization structure can effectively prevent the metal materialin the base from having any vulcanization and provide a perfect LEDpackaging performance. The protection structure also enhances the effectof isolating moisture and oxygen from the whole LED light sourcesufficiently to provide better light emission efficiency.

Preferably, when the LED chip is installed by the flip chip method, theencapsulation structure has a hardness preferably falling within a rangeof D40-D60 to provide a good packaging effect. The protection structurewith a hardness falling within a range of D60-D80 provides the effect ofisolating the moisture and oxygen.

In another embodiment, this disclosure also discloses an LED lightsource, comprising: a base, having an upper edge, a light emittingregion formed and enclosed by the upper edge, an inner mounting surfaceinwardly and concavely formed on the base along the upper edge, and areflective layer disposed on the inner mounting surface; at least an LEDchip, combined with two metal wire bonds and installed at a bottomposition of the inner mounting surface by a flip chip method; ananti-vulcanization structure, continuously and uninterruptible formed onthe reflective layer, the metal wire bonds and a surface of the LEDchip; a light excitation structure, including at least a fluorescentpowder containing an element selected from the group consisting ofsulfur, lead, and phosphorus, and the light excitation structure beingdisposed in the base; an encapsulation structure, disposed in the baseand provided for packaging the light excitation structure and the LEDchip into the base, and the anti-vulcanization structure isolating thereflective layer, the metal wire bonds and the LED chip from directlycontacting with the encapsulation structure, and the encapsulationstructure being made of organic silicone and containing a platinumcatalyst; and a protection structure, installed to the base by adispensing method and covering the encapsulation structure; wherein theencapsulation structure has a hardness lower than the hardness of theprotection structure. The complete protection provided by theanti-vulcanization structure can effectively prevent the metal materialin the base from having any vulcanization and provide a perfect LEDpackaging performance. The protection structure also enhances the effectof isolating moisture and oxygen from the whole LED light source toprovide better light emission efficiency.

Preferably, when the LED chip is combined with two metal wire bonds andinstalled at the bottom position of the inner mounting surface by a flipchip method, the encapsulation structure has a hardness preferablyfalling within a range of D20-D40 to provide a good packaging effect.The protection structure with a hardness falling within a range ofD60-D80 provides the effect of isolating moisture and oxygensufficiently. In addition, the anti-vulcanization structure with athickness falling within a range of 2-10 μm can prevent losing theperformance of isolating the reflective layer from the encapsulationstructure due to a too-thin anti-vulcanization structure, or preventdamaging the metal wire bonds during the thermal expansion stress testdue to a too-thick anti-vulcanization structure.

This disclosure also provides an LED light source manufacturing method,comprising the steps of: providing a base having an upper edge, a lightemitting region formed and enclosed by the upper edge, and an innermounting surface inwardly and concavely formed on the base along theupper edge; forming a reflective layer on the inner mounting surface;providing at least an LED chip installed at a bottom position of theinner mounting surface by a flip chip method or combining two metal wirebonds by a solid crystallization method; injecting a low-viscosity andhigh-volatilization anti-vulcanization solvent to the inner mountingsurface of the base, so that the anti-vulcanization solvent completelycovers all metal materials on the inner mounting surface; resting orheating to volatize the anti-vulcanization solvent to form ananti-vulcanization structure, and the anti-vulcanization structure beingin a continuous and uninterruptible thin film state; providing a lightexcitation structure including at least a fluorescent powder containingone selected from the group consisting of sulfur, lead, and phosphorus,and the light excitation structure being installed in the base;packaging the light excitation structure and the LED chip by anencapsulation structure, and the anti-vulcanization structure isolatingall metal materials on the inner mounting surface from directlycontacting with the encapsulation structure, and the encapsulationstructure being made of organic silicone and containing a platinumcatalyst; and dispensing a protection structure to the base and coveringthe encapsulation structure; wherein the encapsulation structure has ahardness lower than the hardness of the protection structure. Thismethod can effectively prevent sulphur from being chemically reactedwith the metal material or encapsulation structure during the packagingprocess or resulting in an incomplete packaging. This method alsoimproves the reliability and performance of the manufactured LED lightsource.

When the anti-vulcanization solvent is heated and volatilized during theprocess of forming the anti-vulcanization structure, the heatingtemperature is preferably lower than 150° C. to prevent producing airbubbles or cracked films caused by a too-high temperature or a too-slowdischarge of the volatile gas and a solidified film, after theanti-vulcanization structure is formed.

This disclosure also provides an application of the LED light source. Inan embodiment, a direct display device comprises: a display module, fordisplaying a screen; and a backlight module, installed on a side of thedisplay module, and comprising: a circuit board; and a plurality of LEDlight sources, installed on the circuit board, and the LED light sorucescomprise: a base, having an upper edge, a light emitting region formedand enclosed by the upper edge, an inner mounting surface inwardly andconcavely formed on the base along the upper edge, and a reflectivelayer disposed on the inner mounting surface; at least an LED chip,installed at a bottom position of the inner mounting surface by a flipchip method; an anti-vulcanization structure, continuously anduninterruptible formed on the reflective layer and a surface of the LEDchip; a light excitation structure, including at least a fluorescentpowder containing an element selected from the group consisting ofsulfur, lead, and phosphorus, and the light excitation structure beingdisposed in the base; an encapsulation structure, disposed in the baseand provided for packaging the light excitation structure and the LEDchip into the base, and the anti-vulcanization structure isolating thereflective layer and the LED chip from directly contacting with theencapsulation structure, and the encapsulation structure being made oforganic silicone and containing a platinum catalyst; and a protectionstructure, installed to the base by a dispensing method and covering theencapsulation structure; wherein the encapsulation structure has ahardness lower than the hardness of the protection structure. Therefore,the direct display device has better light emission performance andcolor rendering and can effectively reduce the quantity of LED lightsources in the application.

This disclosure also provides an application of the LED light source. Inan embodiment, this disclosure discloses a direct display device,comprising: a display module, for displaying a screen; and a backlightmodule, installed on a side of the display module, and comprising: acircuit board; a plurality of LED light sources, installed on thecircuit board, and comprising: a base, having an upper edge, a lightemitting region formed and enclosed by the upper edge, an inner mountingsurface inwardly and concavely formed on the base along the upper edge,and a reflective layer disposed on the inner mounting surface; at leastan LED chip, combined with two metal wire bonds and installed at abottom position of the inner mounting surface by a flip chip method; ananti-vulcanization structure, continuously and uninterruptible formed onthe reflective layer, the metal wire bonds, and a surface of the LEDchip; a light excitation structure, including at least a fluorescentpowder containing an element selected from the group consisting ofsulfur, lead, and phosphorus, and the light excitation structure beingdisposed in the base; an encapsulation structure, disposed in the baseand provided for packaging the light excitation structure and the LEDchip into the base, and the anti-vulcanization structure isolating thereflective layer, the metal wire bonds, and the LED chip from directlycontacting with the encapsulation structure, and the encapsulationstructure being made of organic silicone and containing a platinumcatalyst; and a protection structure, installed to the base by adispensing method and covering the encapsulation structure; wherein theencapsulation structure has a hardness lower than the hardness of theprotection structure.

In another embodiment based on the aforementioned embodiments, thisdisclosure provides an LED light source further comprising: a pluralityof uniform light particles, scattered into the protection structure, andthe uniform light particles being one selected from the group consistingof SiO₂, BN, Al₂O₃, and TiO₂ or a combination thereof. Therefore, theuniformity of the light color distribution of the LED light source canbe improved.

Preferably, the uniform light particle relative to the protectionstructure has a weight percentage concentration falling within a rangeof 5%-15% in order to meet the requirements for the uniform light colordistributon and the brightness of the light emission.

Preferably, the protection structure is made of a material selected fromorganic silicone, and the corresponding encapsulation structures form abetter bonding strength and provide a more uniform light to presentpossible optical issues such as refractions caused by heterostructures.

In an embodiment, the protection structure is installed at the upperedge of the base by a dispensing method and the protection structure hasan area greater than the area of the light emitting region to improvethe supporting force of the protection structure relative to the base.Further, the upper edge of the base is formed into a stepped shape. Inaddition, the base is made of a transparent material to achieve amulti-directional light output effect.

In a preferred embodiment, the LED chip has a chip light emissionwavelength falling within a range of 400-460 nm, and the lightexcitation structure comprises a green fluorescent powder and a firstred fluorescent powder, and the green fluorescent powder containssulfur, and the first red fluorescent powder does not contain sulfur;and the first red fluorescent powder is selected from the groupconsisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is selectedfrom the group consisting of Li, Na, K, and Rb, and X is selected fromthe group consisting of Ge, Si, Sn, Zr, and Ti; and M is selected fromthe group consisting of Ca, Sr, and Ba. These are mixed to form a whitelight.

In another embodiment, the LED chip has a chip light emission wavelengthfalling within a range of 400-460 nm, and the light excitation structurecomprises a green fluorescent powder and a second red fluorescentpowder, and the green fluorescent powder contains sulfur, and the secondred fluorescent powder also contains sulfur; and the second redfluorescent powder is selected from the group consisting of CaS:Eu²⁺,SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot. These are mixed to form awhite light.

In another embodiment, the LED chip has a light emission wavelengthfalling within a range of 400-460 nm, and the light excitation structurecomprises a green fluorescent powder, a first red fluorescent powder anda second red fluorescent powder, and the green fluorescent powdercontains sulfur, and the first red fluorescent powder does not containsulfur, and the second red fluorescent powder contains sulfur; and thefirst red fluorescent powder is selected from the group consisting ofT₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is selected from thegroup consisting of Li, Na, K, and Rb, and X is selected from the groupconsisting of Ge, Si, Sn, Zr, and Ti; M is selected from the groupconsisting of Ca, Sr, and Ba; and the second red fluorescent powder isselected from the group consisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺,and a red quantum dot. These powders are mixed to form a white light.

In another embodiment, the LED chip comes with a plural quantity, andthe LED chips include a chip with a light emission wavelength fallingwithin a range of 400-460 nm and a green chip, and the light excitationstructure comprises a second red fluorescent powder containing sulfur;and the second red fluorescent powder is selected from the groupconsisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot.These are mixed to form a white light.

In another embodiment, the LED chip comes with a plural quantity, andthe LED chips include a chip with a light emission wavelength fallingwithin a range of 400-460 nm and a green chip, and the light excitationstructure comprises a first red fluorescent powder and a second redfluorescent powder, and the first red fluorescent powder does notcontain sulfur, and the second red fluorescent powder contains sulfur;and the first red fluorescent powder is selected from the groupconsisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is anelement selected from the group consisting of Li, Na, K, and Rb; X is anelement selected from the group consisting of Ge, Si, Sn, Zr and Ti; Mis an element selected from the group consisting of Ca, Sr, and Ba; andthe second red fluorescent powder is selected from the group consistingof CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot. These aremixed to form a white light.

In summation of the description above, the LED light source, LED lightsource manufacturing method and direct display device in accordance withthis disclosure effectively overcome the difficult packaging problemcaused by the catalyst poisoning while improving the efficiency of lightemission and the stability of light color. With the protectionstructure, the light excitation structure and the LED chip can bepackaged by the encapsulation structure in a lower hardness statuswithout worrying about a drop of moisture and oxygen resistingperformance due to a low hardness. In subsequent applications, the lightoutput performance of the direct display device can be improvedeffectively, and the direct display device has a higher contrast andbetter optical effect, so as to reduce the quantity of direct displaydevices used in an application significantly.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view of a base of this disclosure;

FIG. 2 is a first cross-sectional view of an LED light source inaccordance with a first embodiment of this disclosure;

FIG. 3 is a second cross-sectional view of an LED light source inaccordance with the first embodiment of this disclosure;

FIG. 4 is a third cross-sectional view of an LED light source inaccordance with the first embodiment of this disclosure;

FIG. 5 is a fourth cross-sectional view of an LED light source inaccordance with the first embodiment of this disclosure;

FIG. 6 is a first cross-sectional view of an LED light source inaccordance with a second embodiment of this disclosure;

FIG. 7 is a second cross-sectional view of an LED light source inaccordance with the second embodiment of this disclosure;

FIG. 8 is a third cross-sectional view of an LED light source inaccordance with the second embodiment of this disclosure;

FIG. 9 is a flow chart of an LED light source manufacturing method ofthis disclosure;

FIG. 10 is an exploded view of a direct display device of thisdisclosure; and

FIG. 11 is a schematic view of a conventional LED.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The above and other objects, features and advantages of this disclosurewill become apparent from the following detailed description taken withthe accompanying drawings. Only some embodiments of the presentdisclosure have been illustrated in the drawings, but it should bepointed out that many other modifications are conceivable within thescope of the following claims.

From the advancement and practice of LED packaging process, we know thatan LED packaging material and a light-emitting material with a catalystpoison particularly a sulfur-containing light-emitting material willhave a catalyst poisoning phenomenon when they are packaged in a sealedhigh-temperature environment, so that when the packaging material isbaked and cured, the catalyst poison substance and the packagingmaterial will be volatilized at the same time, and the packagingmaterial will be catalyst poisoned, hardened and incomplete. As aresult, the packaging material cannot be solidified successfully to gainthe hardness required for protecting the LED chip and the light-emittingmaterial. Particularly, when silicone is used as the packaging material,the catalyst poisoning phenomenon is more serious. However, theconventional light-emitting material containing the catalyst poison hasa spectral half-wave width much lower than those of other light-emittingmaterials and provides a better color rendering, and silicone with thefeatures of heat and moisture resistance is favorable for the packagingperformance of the LED, so as to extend the service life of the LEDeffectively. However, it falls into an embarrassing situation of unableto package the LED effectively. On the other hand, the LED chip isdisposed on a metal reflective layer in the base and very vulnerable tothe sulphur composition coming from the LED component itself or theexternal environment. After the light-emitting material containing thesulfur (S) composition is packaged to the LED through the plasticpackaging material, the sulfur will corrode the metal reflective layerin the base carrying the LED chip. For example, the metal reflectivelayer may be reacted with electroplating silver, silver, or sulfur toproduce silver sulfide, and there are three typical chemical reactionsas described below: 4Ag+2H₂S+O₂→2Ag₂S+2H₂O; 2Ag+S→Ag₂S; andAg₂S+2O₂→Ag₂SO₄/Ag₂O. Since silver sulfide is not electricallyconductive, therefore the resistance of LED will increase gradually withthe vulcanization and affect the electrical properties of the LED, orthe LED may even be unable to light up. Silver sulfide is a blackcrystal, and thus the metal reflective layer of the LED may lose theeffect of the reflection light and cause a decreased brightness of theLED light source. In the packaging process, sulfur existing in theenvironment may penetrate into the LED and cause the aforementionedvulcanization. In general, the conventional LED products have seriousvulcanization and catalyst poisoning phenomenon, and these problems arestill insolvable effectively. Therefore, related manufacturers stopusing the material containing sulfur and any material causing thecatalyst poisoning phenomenon, and switch using other materials for thepackaging and production of the LED light source. If one has to use theaforementioned light-emitting material, then a plastic material such asUV plastic or acrylic plastic which does not have the catalyst poisoningphenomenon easily is used for the packaging and production instead.Although the materials can be cured, the characteristic of unable toresist high temperature may change the color of the plastic due to thelight/heat produced by the LED, or the material may be even cracked ordecomposed. The light emission efficiency of the LED will be attenuatedwith time quickly. As a result, the product yield and reliability failto comply with requirements.

To overcome the aforementioned problem of the LED light source using theaforementioned materials and the drawbacks of the manufacturing processand subsequent applications, the disclosurer of this disclosureconducted research and development extensively and provided thefollowing LED light source. With reference to FIGS. 1 and 3 for theschematic view of a base this disclosure, the first cross-sectional viewof an LED light source, and the second cross-sectional view of the LEDlight source in accordance with the first embodiment of this disclosurerespectively, the LED light source 1 comprises a base 10, at least anLED chip 11, an anti-vulcanization structure 12, a light excitationstructure 13, an encapsulation structure 14 and a protection structure15. The base 10 has an upper edge 101, a light emitting region A formedand enclosed by the upper edge 101, an inner mounting surface 102concavely formed on the base 10 and along the upper edge 101, and areflective layer 1021 disposed on the inner mounting surface 102.Wherein, the light emitting region A refers to the region enclosed bythe upper edge 101 of the base 10, and the reflective layer 1021 isdisposed within a range covering the whole inner mounting surface 102,or may be disposed on a partial region of the inner mounting surface102. Preferably the reflective layer 1021 is made of silver, gold, orany metal material with good reflection performance. The LED chip 11 isinstalled at the bottom positon of the inner mounting surface 102 by aflip chip method, and the reflective layer 1021 is installed before orafter the LED chip 11 is mounted. The anti-vulcanization structure 12 iscontinuously and uninterruptible formed on the reflective layer 1021 anda surface of the LED chip 11, wherein the anti-vulcanization structure12 with its continuous and uninterruptible structure achieves the effectof not producing any gap that may cause vulcanization. Therefore, theanti-vulcanization structure 13 of this disclosure with the continuousand uninterruptible structure is necessary and has the correspondingeffect. The light excitation structure 13 comprises at least afluorescent powder containing sulfur, lead, or phosphorus, and the lightexcitation structure 13 is installed in the base 10. The encapsulationstructure 14 is installed in the base 10 for packaging the lightexcitation structure 13 and the LED chip 11 into the base 10, and theanti-vulcanization structure 12 isolates the reflective layer 1021 andthe LED chip 11 from directly contacting with the encapsulationstructure 14, and the encapsulation structure 14 is made of organicsilicone and contains a platinum catalyst. The protection structure 15is installed to the base 10 and covers the encapsulation structure 14 bya dispensing method; wherein the hardness of the encapsulation structure14 is lower than the hardness of the protection structure 15.

In the LED light source 1 of this disclosure, the metal material in thebase 10 can be protected effectively by the anti-vulcanization structure12 to prevent the blackening phenomenon caused by sulfur. In the LEDpackaging process and its storage environment, air may contain Sulphur.Now, the anti-vulcanization structure 12 can effectively block andprevent any sulfur from entering into the LED light source 1 to protectthe reflective layer 1021. Particularly, if the fluorescent powder 13 ofthe light excitation structure contains sulfur, the anti-vulcanizationstructure 12 will provide an excellent protection performance. Duringthe packaging and baking processes of the encapsulation structure 14,the platinum catalyst is reacted with sulfur, lead, or phosphorus tocause a decreased hardness, and the protection structure 15 can preventincomplete solidification of the encapsulation structure 14 or failureto package and protect the LED chip 11 and the light excitationstructure 13 effectively, and further achieve the effect of preventingmoisture and oxygen from entering into the LED chip 11. This disclosurealso prevents moisture in the air from affecting or oxidizing the LEDlight source 1 to improve the product yield and reliability of the LEDlight source 1.

To provide a multi-directional light output of the LED light source 1,the base 10 is made of a transparent material. The encapsulationstructure 14 is cured by a low-temperature baking for an hour, so thatthe encapsulation structure 14 slightly has the viscosity and is capableof combining with the protection structure 15 successfully within aspecified range of hardness. The use of a lower baking temperature canreduce the reaction of the platinum catalyst with sulfur, lead, orphosphorus. The protection structure 15 is preferably made of organicsilicone to facilitate the combination with the encapsulation structure23 and prevent affecting the light output of the LED light source 1 byheterostructures. Preferably, the light output angle of the LED lightsource 1 falls within a range of 130-140 degrees.

Compared with the prior art, the protection structure 15 of the LEDlight source 1 has a different structural design with respect to thetraditional mask, wherein the protection structure 15 is formed by adispensing method, so that the protection structure 15 and theencapsulation structure 14 are plastics to improve the tight combinationbetween the two and achieve good light output performance andprotection. In other words, the protection structure 15 is made of aplastic material, but not formed first and then attached onto theencapsulation structure 14. The protection structure 15 is coated ordispensed at the encapsulation structure 14 and then cured and combinedtightly with the encapsulation structure 14. The procedure ofmanufacturing the LED light source 1 will be described in details below.

Since the LED chip 11 is installed at a bottom position of the innermounting surface 102 by a flip chip method, so that the LED chip 11requires no wire bonding process. Preferably, the encapsulationstructure 14 has a hardness falling within a range of D40-D60 to preventthe encapsulation structure 14 from becoming a liquid due to a too-lowhardness, so that the light excitation structure 13 cannot react, or theencapsulation structure 14 is too soft and not suitable for packagingthe light excitation structure 13 and the LED chip 11. In addition, ifthe plastic material has a higher density, its corresponding hardnessand oxygen and moisture resistance will be higher. The protectionstructure 15 of the LED light source 1 is disposed at the outermostlayer of the whole structure and used as a first wire device forblocking oxygen and moisture, and its hardness preferably falls within arange of D60-D80, and a high density to block the moisture and oxygenand maintain a good protection strength.

As described above, the LED light source 1 of this disclosure has anexcellent protection function by packaging the sulfur-containing lightexcitation structure 13 effectively, or provides an excellent lightemission performance. After the LED is soldered to the circuit board forapplication, the LED has to go through a Surface Mount Technology ReflowSoldering Test (SMTRST). If the test is passed, a serious attenuationwill occur, and the LED will become usable. For the LED light source 1of this disclosure, the disclosurer conducted a Surface Mount TechnologyReflow Soldering Test (SMTRST) of the conventional LED at 260 degrees,and the test results show that the LED light source 1 of this disclosureprovides more uniformly light color, better brightness and betterproduct reliability. The test results and detailed contents will bedescribed in details below.

In the field of manufacturing LEDs, the light output of the LED islimited within a target color frame in a CIE chromaticity map accordingto the requirement of the output light color. Therefore, it is animportant subject for LED manufacturers to minimize the alternationamplitude of the LED in the target color frame, so that the output lightof the LED at different angles has the same color. In other words, theLED needs a better uniformity of the light color distribution. It isnoteworthy that the range of the CIE-x axis of the target color frame ofthe conventional LED is limited, and the portion with a deviated lightcolor is situated within the range of the CIE-y axis, so that if thelight color difference of the CIE-y axis can be decreased effectively,the uniformity of the output light color of the LED can be improvedsignificantly. To provide a consistent output light color and reduce thecolor deviation, this disclosure provides an LED light source 1 furthercomprising a plurality of uniform light particles 16 scattered in theprotection structure 15 and uniformly distributed, wherein the uniformlight particle 16 is selected from the group consisting of SiO₂, BN,Al₂O₃, and TiO₂ or a combination thereof. The uniform light particles 16can produce refraction or reflection of the light passing through theprotection structure 15, so that the protection structure 15 can improvethe mixed light effect and maintain the output light color of the LEDlight source 1 at different angles to be consistent, and achieve a moreuniform light output. Preferably, the uniform light particles 16relative to the protection structure 15 has a weight percentageconcentration falling within a range of 5%-15% to prevent a large changeof light color due to the low weight percentage concentration of theuniform light particles 16, or an excessive attenuation of thebrightness (which fails to comply with the requirement of use) due to ahigh weight percentage concentration. For the LED light source 1 addedwith the uniform light particles 16 of different weight percentageconcentrations, the disclosurer of this disclosure measures the lightcolor and brightness, and then adds the uniform light particles 16according to the measurement results to further improve the uniformityof the output light color of the LED light source 1 at different angles.The measurement results will be described in details below.

With reference to FIG. 2 for a specific structure of the LED lightsource 1 in accordance with this embodiment, the LED chip 11 has a lightemission wavelength falling within a range of 400-460 nm, and the lightexcitation structure 13 comprises a green fluorescent powder 131 and afirst red fluorescent powder 132, and the green fluorescent powder 131contains sulfur, and the first red fluorescent powder 132 does notcontain sulfur; and the first red fluorescent powder 132 is selectedfrom the group consisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, andCaAlSiN₃:Eu²⁺; T is an element selected from the group consisting of Li,Na, K, and Rb, and X is an element selected from the group consisting ofGe, Si, Sn, Zr, and Ti; and M is an element selected from the groupconsisting of Ca, Sr, and Ba. After the LED light source 1 is driven,the light emitted from the LED chip 11, the green light excited andemitted by the green fluorescent powder 131, and the red light excitedand emitted by the first red fluorescent powder 132 are mixed to emit awhite light. Preferably, the green fluorescent powder 131 is a materialselected from the group consisting of CdS and ZnS quantum dotlight-emitting materials and SrGa₂S₄:En²⁺, and the green fluorescentpowder 131 has a spectral half-wave width falling within a range of20-40 nm or 40-60 nm, and the first red fluorescent powder 132 has aspectral half-wave width falling within a range of 2-7 nm or 75-95 nm.Wherein, the green fluorescent powder 131 may be the aforementionedmaterials. In other implementation modes, the green fluorescent powder131 may also be a quantum dot light-emitting material containing lead orlead selected from the group consisting of CsPbBr₃ and InP. Wherein, thelight emission wavelength of 400-460 nm is mostly suitable forabsorption by the light excitation structure 13 and complies with thelight color specification for applications in the field of display, sothat the LED chip 11 with the light emission wavelength of 400-460 nmmay be used to obtain the best light output performance and lightemission efficiency.

With reference to FIGS. 1 and 3, FIG. 3 shows a second cross-sectionalview of an LED light source in accordance with the first embodiment ofthis disclosure. In addition to the configuration as described above,the LED chip 11 with a light emission wavelength falling within a rangeof 400-460 nm is used, and the light excitation structure 13 comprises agreen fluorescent powder 131 and a second red fluorescent powder 133,and the green fluorescent powder 131 contains sulfur, and the second redfluorescent powder 133 also contains sulfur. Wherein, the second redfluorescent powder 133 is selected from the group consisting ofCaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot. Preferably, thegreen fluorescent powder 131 has a spectral half-wave width fallingwithin a range of 20-40 nm or 40-60 nm, and the second red fluorescentpowder 133 has a half-wave width falling within a range of 20-40 nm or55-75 nm. Wherein, when the second red fluorescent powder 133 is a redquantum dot material, the second red fluorescent powder 133 may be ZnS,CdS, etc. Both of the green fluorescent powder 131 and the second redfluorescent powder 133 containing the sulfur fluorescent powder providea better color mixing effect of the LED light source 1. In suchstructure, the reflective layer 1021 not completely covering the innermounting surface 102 is used as an example, and the anti-vulcanizationstructure 12 as shown in FIG. 3 is continuously and uninterruptibleformed at the reflective layer 1021 and a surface of the LED chip 11 toblock and prevent the vulcanization of the metal material in the base10. Besides the aforementioned material used as the green fluorescentpowder 131 and second red fluorescent powder 133, the second redfluorescent powder 133 of another embodiment may be one selected fromthe group consisting of CsPbBr₃, InP, or any other quantum dotlight-emitting material containing lead or phosphorus, and the greenfluorescent powder 131 may be one selected from the group consisting ofCsPbBr₃, InP, or any other quantum dot light-emitting materialcontaining lead or phosphorus, which is also applicable for the LEDlight source 1.

To prevent the encapsulation structure 14 from being crushed after theprotection structure 15 with a greater hardness is formed and dispensed,the protection structure 15 is dispensed at the upper edge 101 of thebase 10, and the protection structure 15 has an area greater than thearea of the light emitting region A in order to provide a sufficientsupporting force to the protection structure 15.

With reference to FIGS. 1 and 4, FIG. 4 shows a third cross-sectionalview of an LED light source in accordance with the first embodiment ofthis disclosure. In addition to the configuration as described above,the LED chip 11 of the LED light source 1 has a light emissionwavelength falling within a range of 400-460 nm, and the lightexcitation structure 13 comprises the green fluorescent powder 131, thefirst red fluorescent powder 132 and the second red fluorescent powder133, and the green fluorescent powder 131 contains sulfur, and the firstred fluorescent powder 132 does not contain sulfur, and the second redfluorescent powder 133 contains sulfur. Wherein, the first redfluorescent powder 132 is selected from the group consisting ofT₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is an element selectedfrom the group consisting of Li, Na, K, and Rb, and X is an elementselected from the group consisting of Ge, Si, Sn, Zr, and Ti; M is anelement selected from the group consisting of Ca, Sr, and Ba, the secondred fluorescent powder 133 is selected from the group consisting ofCaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot. Preferably, thegreen fluorescent powder 131 has a spectral half-wave width with a rangeof 20-40 nm or 40-60 nm, and the first red fluorescent powder 132 has aspectral half-wave width falling within a range of 2-7 nm or 75-95 nm,and the second red fluorescent powder 133 has a spectral half-wave widthfalling within a range of 20-40 nm or 55-75 nm. The mixture of the firstred fluorescent powder 132 and the second red fluorescent powder 133,one containing sulfur and the other one not containing sulfur overcomesthe light color issue of the LED light source 1 and even reduces theafterimage of red light in some applications, so as to improve the lightoutput performance of the LED light source 1 effectively. In addition tothe aforementioned materials used as the second red fluorescent powder133 and the green fluorescent powder 131, the second red fluorescentpowder 133 may also be one selected from the group consisting ofCsPbBr3, InP, or any quantum dot light-emitting material containing leador phosphorus, and the green fluorescent powder 131 may also be oneselected from the group consisting of CsPbBr3, InP, or any quantum dotlight-emitting material containing lead or phosphorus, which are alsoapplicable to the LED light source 1.

With reference to FIGS. 1 and 5, FIG. 5 shows a fourth cross-sectionalview of an LED light source in accordance with the first embodiment ofthis disclosure. In addition to the description of the protectionstructure 15 having an area greater than the area of the light emittingregion A, the upper edge 101 of the base 10 may be formed into a steppedshape to achieve the effects of accommodating and fixing the protectionstructure 15, enhancing the fixing and supporting performance, blockingand preventing the protection structure 15 from pressing and damagingthe encapsulation structure 14, and providing a good efficiency to thedispensing process. Wherein, the LED chip 11 of the LED light source 1comes with a plural quantity and the LED chips 11 include a chip with alight emission wavelength falling within a range of 400-460 nm and agreen chip, and the light excitation structure 13 comprises a second redfluorescent powder 133, and the second red fluorescent powder 133contains sulfur. Wherein, the second red fluorescent powder 133 isselected from the group consisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺,and a red quantum dot. Preferably, the second red fluorescent powder 133has a spectral half-wave width of approximately 20-40 nm or 55-75 nm. Inthe LED light source 1, the lights emitted from the LED chips 11 arecombined with the sulfur-containing second red fluorescent powder 133and mixed to form a white light. Alternatively, or the LED chip 11 asshown in FIG. 5 comes with a plural quantity, and the LED chips 11comprises a chip with a light emission wavelength falling within a rangeof 400-460 nm and a green chip, and the light excitation structure 13comprises a first red fluorescent powder 132 and a second redfluorescent powder 133, and the first red fluorescent powder 132 doesnot contain sulfur, and the second red fluorescent powder 133 containssulfur. Wherein, the first red fluorescent powder 132 is selected fromthe group consisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; Tis an element selected from the group consisting of Li, Na, K, and Rb,and X is an element selected from the group consisting of Ge, Si, Sn,Zr, and Ti; M is an element selected from the group consisting of Ca,Sr, and Ba, the second red fluorescent powder 133 is selected from thegroup consisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantumdot. Preferably, the first red fluorescent powder 132 has a spectralhalf-wave width falling within a range of 2-7 nm or 75-95 nm, and thesecond red fluorescent powder 133 has a spectral half-wave width of20-40 nm or 55-75 nm. In this embodiment, the sulfur-containing andnon-sulfur-containing first red fluorescent powder 132 and second redfluorescent powder 133 has a high light color expression and alsoreduces the after image caused by the red light. Of course, when theupper edge 101 of the base 10 is formed into a stepped shape, the LEDchip with a light emission wavelength falling within a range of 400-460nm is used, and the light excitation structure 13 is a structurecomprising the green fluorescent powder 131 and the first redfluorescent powder 132 and/or the second red fluorescent powder 133.Wherein, the aforementioned materials are used as the second redfluorescent powder 133, and when the second red fluorescent powder 133is a red quantum dot, a material selected from the group consisting ofCsPbBr₃, InP, and any other quantum dot light-emitting materialcontaining lead or phosphorus is also applicable for the LED lightsource and provide a good color mixing performance.

With reference to FIGS. 1 and 6, FIG. 6 shows a first cross-sectionalview of an LED light source in accordance with the second embodiment ofthis disclosure. In addition to the flip chip method used for the LEDchip 11 of the LED light source 1, the LED chip 11 may also beconfigured by the wire bonding method. In this embodiment, the LED lightsource 1 also comprises the base 10, the LED chip 11, theanti-vulcanization structure 12, the light excitation structure 13, theencapsulation structure 14 and the protection structure 15. The base 10has an upper edge 101 and a light emitting region A formed and enclosedby the upper edge 101, and the base 10 has an inner mounting surface 102concavely formed on the base 10 and along the upper edge 101, and areflective layer 1021 disposed on the inner mounting surface 102.Wherein, the light emitting region A refers to the region formed andenclosed by the upper edge 101 of the base 10 as shown in FIG. 1. Theregion of the reflective layer 1021 covers the inner mounting surface102, or a part of the area of the inner mounting surface 102 asrequired. The LED chip 11 is combined with two metal wire bonds 17 andinstalled at a bottom position of the inner mounting surface 102 bysolid crystallization, and the anti-vulcanization structure 12 iscontinuously and uninterruptible formed at the reflective layer 1021,the metal wire bonds 17, and a surface of the LED chip 11, wherein theanti-vulcanization structure 12 with the continuous and uninterruptiblestructural characteristic can prevent any gap produced or caused by thevulcanization, so that the anti-vulcanization structure 13 of thisdisclosure with the continuous and uninterruptible structuralcharacteristic is necessary to achieve the corresponding effects. Thelight excitation structure 13 comprises at least a fluorescent powdercontaining sulfur, lead, or phosphorus, and the light excitationstructure 13 is installed in the base 10, and the encapsulationstructure 14 is installed in the base 10 and provided for packaging thelight excitation structure 13 and the LED chip 11 into the base 10, andthe anti-vulcanization structure 12 isolates the reflective layer 1021and the LED chip 11 from directly contacting with the encapsulationstructure 14, and the encapsulation structure 14 is made of organicsilicone and contains a platinum catalyst. The protection structure 15is installed at the base 10 and covered onto the encapsulation structure14 by a dispensing method.

Similarly, the anti-vulcanization structure 12 is provided foreffectively protecting the structure of the metal material in the base10 to prevent any vulcanization caused by the environment, the lightexcitation structure, or other components. The protection structure 15is provided for preventing the encapsulation structure 14 from beingcured incompletely or failing to effectively package and protect the LEDchip 11 and the light excitation structure 13, and further achieves theeffect of preventing moisture and oxygen from entering into theencapsulation structure 14 to improve the product yield and reliabilityof the LED light source 1. With the installation of the LED source 1 bywire bonding or solid crystallization, the base 10 is made of atransparent material, and the protection structure 15 is preferably oneselected from the group consisting of organic silicone to facilitate thecombination with the encapsulation structure 23 and prevent theheterostructure from affecting the light output of the LED light source1. Wherein, the encapsulation structure 14 is preferably cured at alow-temperature baking environment for an hour in order to combine withthe protection structure 15 within a range of curing hardness. Theremaining details and technical characteristics are the same as thosedescribed in the aforementioned embodiments and will not be repeated.

Unlike the prior art, the protection structure 15 of the LED lightsource 1 is different from the structural design of the traditionalmask, and the protection structure 15 is formed by a dispensing method,so that the protection structure 15 and the encapsulation structure 14made of a plastic material can improve the connection between theprotection structure 15 and the encapsulation structure 14 to achievegood light output performance and protection performance. In otherwords, the protection structure 15 is not installed on the encapsulationstructure 14 by an attaching method after the protection structure 15 inthe manufacturing process, but it is installed at the encapsulationstructure 14 by a dispensing method, and then cured to combine with theencapsulation structure 14 tightly.

Since the LED chip 11 combined with the metal wire bonds 17 is installedat the bottom position of the inner mounting surface 102, the metal wirebonds 17 may be broken or cracked easily if the hardness of theencapsulation structure 14 is too high. Therefore, the hardness of theencapsulation structure 23 preferably falls within a range of D20-D40 toprevent the metal wire bonds 17 from being broken or cracked by a highhardness. In addition, when the plastic material has an increasinglyhigher density, the corresponding hardness and strength of blockingoxygen and moisture become increasingly greater. The protectionstructure 15 of the LED light source 1 is a first wire device disposedon the outermost layer of the whole structure and provided for blockingand oxygen and moisture, and whose hardness preferably falls within arange of D60-D80 and the protection structure 15 has a higher density toblock moisture and oxygen and provides a good protection strength.

Since the hardness of the anti-vulcanization structure 12 approximatelyfalls within a range of D70-D100, and a solder ball formed by combiningthe LED chip 11 with the metal wire bonds 17 has a thickness generallyfalling within a range of 10-20 μm, in order to prevent theanti-vulcanization structure 12 from being too-thick, such that themetal wire bonds 17 is affected or damaged by the stress caused bythermal expansion and contraction, or prevent the anti-vulcanizationstructure 12 being too-thin or losing the effect of protecting thereflective layer 1021, and maintain the thickness of theanti-vulcanization structure 12 falling within a range of 2-10 μm.

Similarly, the method of installing the LED chip 11 of the LED lightsource 1 by the metal wire bonds 17 may be effectively packaged by thelight excitation structure 13 containing the aforementionedcompositions. In addition to the excellent protection function, the LEDchip 11 also has an excellent light emission performance. A SurfaceMount Technology Reflow Soldering Test (SMTRST) of the LED light source1 of this disclosure at 260° is conducted to compared with theconventional LED, and the experiment data and results will be describedin details below.

To provide a consistent output light color of the LED light source 1 andreduce the color deviation, the LED light source 1 of this embodimentfurther comprises a plurality of uniform light particles 16 scattered inthe protection structure 15, wherein the uniform light particle 16 isselected from the group consisting of SiO₂, BN, Al₂O₃, and TiO₂ or anycombination thereof. With the uniform light particles 16, the lightpassing through the protection structure has a refraction or reflection,and the protection structure 15 can enhance the mixed light effect, sothat the output light colors of the LED light source 1 at differentangles are consistent, and the overall light output is more uniformly.Preferably, the uniform light particles 16 relative to the weightpercentage concentration of the protection structure falls within arange of 5%-15% to prevent a too-low weight percentage concentration ofthe uniform light particles 16 (resulting in a too-large variation oflight color), or to prevent a too-high weight percentage concentration(resulting in a too-large attenuation of brightness), which isincompliance with the using requirements. For the LED light source 1added with uniform light particles 16 of different weight percentageconcentrations, the disclosurer of this disclosure measures the lightcolor and brightness, and the results show the improved uniformity ofthe output light color of the LED light source 1 at different anglesafter the uniform light particles 16 are added, and the measurementresults are described in details below.

In this embodiment, the structure of the LED light source 1 is shown inFIG. 6, wherein the LED chip 11 has a light emission wavelength fallingwithin a range of 400-460 nm, and the light excitation structure 13comprises a green fluorescent powder 131 and a first red fluorescentpowder 132, and the green fluorescent powder 131 contains sulfur, andthe first red fluorescent powder 132 does not contain sulfur. Wherein,the first red fluorescent powder 132 is selected from the groupconsisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is anelement selected from the group consisting of Li, Na, K, and Rb, and Xis an element selected from the group consisting of Ge, Si, Sn, Zr, andTi; M is an element selected from the group consisting of Ca, Sr, andBa. After the LED light source 1 is driven, the light emitted from theLED chip 11, the green light excited and emitted by the greenfluorescent powder 131, and the red light excited and emitted by thefirst red fluorescent powder 132 are mixed to form and emit a whitelight. Preferably, the green fluorescent powder 131 has a spectralhalf-wave width with a range of approximately 20-40 nm or 40-60 nm, andthe first red fluorescent powder 132 has a spectral half-wave widthfalling within a range of 2-7 nm or 75-95 nm. Wherein, the protectionstructure 15 is installed at the upper edge 101 of the base 10 by thedispensing method, and the protection structure 15 has an area greaterthan the area of the light emitting region A as shown in FIG. 6 in orderto protect the encapsulation structure 14, and provides a support by theupper edge 101 of the base 10, so as to prevent the protection structure15 from being too hard or pressing/damaging the encapsulation structure14. Of course, when the LED chip 11 is installed by a wire bonding orsolid crystallization method, the protection structure 15 may bedispensed directly as shown in FIG. 2. The other technicalcharacteristics have been described above and thus will not be repeated.

With reference to FIGS. 1 and 7, FIG. 7 shows a second cross-sectionalview of an LED light source in accordance with the second embodiment ofthis disclosure. In addition to the configuration as described above,the LED chip 11 of the LED light source 1 has a light emissionwavelength falling within a range of 400-460 nm, and the lightexcitation structure 13 comprises the green fluorescent powder 131, thefirst red fluorescent powder 132 and the second red fluorescent powder133, and the green fluorescent powder 131 contains sulfur, and thesecond red fluorescent powder 133 also contains sulfur. Wherein, thesecond red fluorescent powder 133 is selected from the group consistingof CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot. Preferably,the green fluorescent powder 131 has a spectral half-wave width with arange of 20-40 nm or 40-60 nm, and the second red fluorescent powder 133has a spectral half-wave width falling within a range of 20-40 nm or55-75 nm. The mixture of the green fluorescent powder 131 and the secondred fluorescent powder 133 containing the sulfur fluorescent powderprovides a better color mixing expression of the LED light source 1. Inthis structure, the reflective layer 1021 has not covered the wholeinner mounting surface 102, and the anti-vulcanization structure 12 asshown in FIG. 7 is continuously and uninterruptible formed at thereflective layer 1021, the metal wire bonds 17 and a surface of the LEDchip 11 in order to block and prevent the vulcanization of the metalmaterial in the base 10. When the LED chip 11 of the LED light source 1has a light emission wavelength falling within a range of 400-460 nm,the light excitation structure 13 may also include the green fluorescentpowder 131, the first red fluorescent powder 132 and the second redfluorescent powder 133, and the green fluorescent powder 131 containssulfur, and the first red fluorescent powder 132 does not includesulfur, and the second red fluorescent powder 133 contains sulfur.Wherein, the first red fluorescent powder 132 is selected from the groupconsisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is anelement selected from the group consisting of Li, Na, K, and Rb, and Xis an element selected from the group consisting of Ge, Si, Sn, Zr, andTi; M is an element selected from the group consisting of Ca, Sr, andBa, the second red fluorescent powder 133 is selected from the groupconsisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot.Preferably, the green fluorescent powder 131 has a spectral half-wavewidth falling within a range of 20-40 nm or 40-60 nm, and the first redfluorescent powder 132 has a spectral half-wave width falling within arange of 2-7 nm or 75-95 nm, and the second red fluorescent powder 133has a spectral half-wave width of 20-40 nm or 55-75 nm. The mixture ofthe sulfur-containing and non-sulfur-containing first red fluorescentpowder 132 and the second red fluorescent powder 133 can improve thelight color expression of the LED light source 1 and even can reduce theafterimage of the red light in some applications to effectively improvethe light output performance of the LED light source 1.

With reference to FIGS. 1 and 8, FIG. 8 shows a third cross-sectionalview of an LED light source in accordance with the second embodiment ofthis disclosure. In addition to the configuration as described above,the upper edge 101 of the base 10 is formed into a stepped shape andcapable of accommodating and fixing the protection structure 15,enhancing the fixing and supporting performance, and providing a goodefficiency for the dispensing process. In addition, the LED chip 11comes with a plural quantity, and the LED chips 11 include a chip with alight emission wavelength falling within a range of 400-460 nm and agreen chip, and the light excitation structure 13 comprises a second redfluorescent powder 133, and the second red fluorescent powder 133contains sulfur. Wherein, the second red fluorescent powder 133 isselected from the group consisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺,and a red quantum dot. Preferably, the second red fluorescent powder 133has a half-wave width of 20-40 nm or 55-75 nm. In this LED light source1, the blue and green the LED chip 11 are combined with thenon-sulfur-containing first red fluorescent powder 132 and thesulfur-containing the second red fluorescent powder 133 to form a whitelight. The LED chip 11 as shown in FIG. 8 comes with a plural quantity,and the LED chips 11 includes a chip with a light emission wavelengthfalling within a range of 400-460 nm and a green chip, and the lightexcitation structure 13 comprises a first red fluorescent powder 132 anda second red fluorescent powder 133, and the first red fluorescentpowder 132 does not contain sulfur, and the second red fluorescentpowder 133 contains sulfur. Wherein, the first red fluorescent powder132 is selected from the group consisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺,and CaAlSiN₃:Eu²⁺; T is an element selected from the group consisting ofLi, Na, K, and Rb, and X is an element selected from the groupconsisting of Ge, Si, Sn, Zr, and Ti; M is an element selected from thegroup consisting of Ca, Sr, and Ba, the second red fluorescent powder133 is selected from the group consisting of CaS:Eu²⁺, SrS:Eu²⁺,Ba₂ZnS₃:Mn²⁺, and a red quantum dot. Preferably, the first redfluorescent powder 132 has a spectral half-wave width falling within arange of 2-7 nm or 75-95 nm, and the second red fluorescent powder 133has a spectral half-wave width with a range of 20-40 nm or 55-75 nm. Inthis implementation mode, the sulfur-containing andnon-sulfur-containing first red fluorescent powder 132 and second redfluorescent powder 133 has a high light color expression and alsoreduces the after image produced by the red light. The upper edge 101 ofthe base 10 is formed into a stepped shape to further prevent theprotection structure 15 from pressing and damaging the encapsulationstructure 14.

Experiment data and results of the Surface Mount Technology ReflowSoldering Test (SMTRST) of the LED light source 1 of this disclosure andthe conventional LED 9 conduced at 260° are compared and describedbelow. Table 1 lists the experiment results of the SMTRST of theconventional LED including a purple LED chip or a blue LED chipconducted for two times. The structure of the tested conventional LED 9is shown in FIG. 11, wherein the structure comprises a base 90, and apackaging material 93 for packaging a sulfur-containing light-emittingmaterial 92 and a blue or purple LED chip 91 into the base 90. In Table1, after the SMTRST of the conventional LED 9 is conducted, thebrightness of the conventional LED 9 is attenuated for approximately20-30%, and the light color is shifted for approximately 5-11BIN(wherein the numerical value of each BIN is 0.005).

TABLE 1 Light Color CIE-x Light Light Light Attenuation Color ColorColor Brightness Brightness Value CIE-x CIE-y CIE-y Type of AttenuationAttenuation before/ Attenuation Attenuation Attenuation Chip Value Valueafter Value Value Value bundled in before/after before/after SMTRSbefore/after before/after before/after the SMTRS SMTRS for SMTRS SMTRSSMTRS Conventional for one for two one for two for one for two LED timetimes time times time times Blue light 73.82% 72.97% −0.0131 −0.0138−0.0278 −0.0283 LED chip Purple 76.83% 75.26% −0.0197 −0.0211 −0.0541−0.0582 light LED chip

Table 2 shows the experiment results of the protection structure 15 ofthe LED light source 1 of this disclosure made of organic silicone andhaving a hardness of D80 and bundled with the blue light or purple lightLED chip 11. After a SMTRST of the LED light source 1 is conducted, thebrightness of the LED light source 1 is attenuated by approximately 6%,and the light color is shifted by approximately 3BIN (wherein thenumerical value of one BIN is 0.005).

TABLE 2 Light Light Light Light Type Color Color Color Color ofBrightness Brightness CIE-x CIE-x CIE-y CIE-y chip AttenuationAttenuation Attenuation Attenuation Attenuation Attenuation bundledValue Value Value Value Value Value with before/after before/afterbefore/after before/after before/after before/after LED SMTRS SMTRSSMTRS SMTRS SMTRS SMTRS light for one for two for one for two for onefor two source time times time times time times Blue 99.19% 97.76%−0.0006 −0.0016 −0.001 −0.0028 light LED chip Purple 97.53% 96.90%−0.0054 −0.0063 −0.0069 −0.0056 light LED chip

Table 3 shows the experiment results of the protection structure 15 ofthe LED light source 1 of this disclosure made of organic silicone andhaving a hardness of D65 and bundled with the blue light or purple lightLED chip 11. After a SMTRST of the LED light source 1 is conducted, thebrightness of the LED light source 1 is attenuated by approximately 10%,and the light color is shifted by approximately 3BIN (wherein thenumerical value of one BIN is 0.005).

TABLE 3 Light Color Light Color Light Color Light Color BrightnessBrightness CIE-x CIE-x CIE-y CIE-y Attenuation Attenuation AttenuationAttenuation Attenuation Attenuation Type Value Value Value Value ValueValue of chip before/after before/after before/after before/afterbefore/after before/after bundled SMTRS SMTRS SMTRS SMTRS SMTRS SMTRSwith LED for one for two for one for two for one for two light sourcetime times time times time times blue 89.04% 85.18% −0.0039 −0.0047−0.0091 −0.0112 light LED chip purple 96.00% 94.72% −0.0047 −0.0049−0.0096 −0.0122 light LED chip

From the aforementioned experiment results, the LED light source 1 ofthis disclosure can effectively overcome the attenuation issue of theconventional LED 9, so that the attenuation of brightness is decreasedfrom 20-30% to 15%, or even down to 6%, and the attenuation of lightcolor is controlled and decreased from 5-15BIN, to 3BIN or even down to2BIN.

Please refer to the contents of the following tables for the measurementresult of the light color CIE-x color difference, the light color CIE-ycolor difference and the attenuation of brightness of the LED lightsource 1 with/without adding the uniform light particles 16 (such asAl₂O₃) of different weight percentage concentrations. Since the LEDlight source 1 has a light output angle falling within a range of130-140°, and thus the largest angle of the measurement is up to ±70°.

Table 4 shows the experiment data and results of the light color CIE-xcolor difference after the protection structure 15 of the LED lightsource 1 is added with the uniform light particles 16 of differentweight percentage concentrations; Table 5 shows the experiment data andresults of the light color CIE-y color difference after the protectionstructure 15 of the LED light source 1 is added with the uniform lightparticles 16 of different weight percentage concentrations; and Table 6shows the experiment data and results of the attenuation of brightnessafter the protection structure 15 of the LED light source 1 is addedwith the uniform light particles 16 of different weight percentageconcentrations; wherein the light color CIE-x color difference, thelight color CIE-y color difference and the attenuation of brightnessrefer to the CIE-x, CIE-y and brightness differences relative to theangular position of 0°.

TABLE 4 Weight Percentage Concentration of Uniform Light Particles −50°50° 70° added light light −60° 60° −70° light to LED color color lightlight light color Light CIE-x CIE-x color CIE- color CIE- color CIE-CIE-x Source color color x color x color x color color (%) differencedifference difference difference difference difference 0 0.0005 0.00050.0009 0.0011 0.0012 0.0014 5 0.0003 0.0004 0.0003 0.0002 0.0006 −0.000710 0.0003 0.0001 0.0003 0.0000 0.0005 −0.0006 15 0.0002 0.0003 0.00030.0005 0.0004 0.0004

TABLE 5 Weight Percentage Concentration of Uniform 70° Light 50° light−60° light 60° light light Particles −50° light color color color −70°light color added to color CIE- CIE-y CIE-y CIE-y color CIE- CIE-y LEDLight y color color color color y color color Source (%) differencedifference difference difference difference difference 0 0.0007 0.00100.0013 0.0019 0.0017 0.0025 5 −0.0003 −0.0002 0.0003 −0.0011 0.0010−0.0024 10 0.0006 −0.0001 0.0008 −0.0004 −0.0001 −0.0012 15 0.00010.0004 −0.0003 0.0003 −0.0001 0.0005

TABLE 6 Weight Percentage Concentration of Uniform Light Particles addedto 0° −50° 50° −60° 60° −70° 70° LED Light brightness brightnessbrightness brightness brightness brightness brightness Source (%) (%)(%) (%) (%) (%) (%) (%) 0 100.00 63.66 61.24 46.94 44.74 29.22 27.39 574.39 43.01 50.66 32.70 39.22 22.11 27.31 10 69.49 42.26 46.86 31.8536.28 20.67 24.29 15 48.87 29.13 33.17 21.48 25.40 13.79 17.33

From the content of each table above, the higher the weight percentageconcentration of the uniform light particles, the smaller the lightcolor difference of the LED light source 1, and the lower thebrightness. Therefore the uniform light particles 16 relative to theprotection structure 15 has a weight percentage concentration fallingwithin a range of 5%-15%, and thus complying with the requirements ofbrightness and light color uniformity, so as to further improve thelight output performance of the LED light source 1.

With reference to FIG. 9 for the flow chart of an LED light sourcemanufacturing method in accordance with this disclosure, and FIGS. 1 to8 for the structure bundled with the LED light source, the LED lightsource manufacturing method for manufacturing the aforementioned LEDlight source comprises the following steps (S01-S08).

S01: Provide a base 10 having an upper edge 101, a light emitting regionformed and enclosed by the upper edge 101, and an inner mounting surface102 inwardly and concavely formed on the base 10 along the upper edge101. Similarly, the light emitting region A does not refer to the lightemission range of the LED light source 1, but it refers to the areaenclosed by the upper edge 101 of the base 10.

S02: Form a reflective layer 1021 on the inner mounting surface 102.

S03: Provide at least an LED chip 11 installed at the bottom position ofthe inner mounting surface 102 by a flip chip method or combining twometal wire bonds by a solid crystallization method. The reflective layer1021 is configured to cover the inner mounting surface 102, or some areao at the inner mounting surface 102 as needed, and the reflective layer1021 after or before the LED chip 11 is installed, and the order ofinstallation is not limited in this disclosure. The LED chip 11 isinstalled by the flip chip method or combined with the metal wire bonds17. When the LED chip is installed by the flip chip method, theencapsulation structure 14 has a hardness preferably falling within arange of D40-D60, so that the encapsulation structure 14 can protect thelight excitation structure 13 and the LED chip. If the LED chip 11 isinstalled by combining the metal wire bonds 17, the encapsulationstructure 14 has a hardness preferably falling within a range of D20-D40to prevent the encapsulation structure 14 from affecting the metal wirebonds 17. To enhance the light output performance of the LED lightsource 1, the base 10 is preferably made of a transparent material, sothat the LED light source 1 has a multidirectional light output effect.

S04: Inject a low-viscosity and high-volatilization anti-vulcanizationsolvent to the inner mounting surface 102 of the base 10, so that theanti-vulcanization solvent completely covers all metal materials on theinner mounting surface 102.

S05: Rest or heat to volatize the anti-vulcanization solvent to form ananti-vulcanization structure 12, and the anti-vulcanization structure 12is in a continuous and uninterruptible thin film state. Preferably, theanti-vulcanization solvent is a silicone solvent with a silicone contentof approximately 2-3%, and the remaining part is a solvent selected fromethylacetate and toluene below 0.2%, and the anti-vulcanization solventhas the low-viscosity and high-volatilization characteristics. Theanti-vulcanization structure 12 formed after the anti-vulcanizationsolvent is volatilized has a hardness preferably falling within a rangeof D70-D100, a water vapor transmission rate less than 10 g/m2.24 h, andan oxygen transmission rate less than 500 cm3/m2.24 h.atm. Wherein, ifthe anti-vulcanization solvent is volatilized by heating, the heatingtemperature is lower than 150° C., wherein a too-high heatingtemperature may cause the volatile gas not escaping timely before thefilm is cured and may result in the production of air bubbles or filmcracks after the anti-vulcanization structure 12 is formed. If the LEDchip 11 is installed by combining the metal wire bonds 17, to preventthe anti-vulcanization structure 12 with a high hardness from being toothick, so that the metal wire bonds 17 may be damaged during thermalexpansion and contraction. Preferably, the anti-vulcanization structure12 has a thickness falling within a range of 2-10 μm.

S06: Provide a light excitation structure including at least afluorescent powder containing one selected from the group consisting ofsulfur, lead, and phosphorus, and the light excitation structure 13 isinstalled in the base.

S07: Package the light excitation structure 13 and the LED chip 11 by anencapsulation structure 14, and the anti-vulcanization structure 12isolates all metal materials on the inner mounting surface 102 fromdirectly contacting with the encapsulation structure 14, and theencapsulation structure 14 is made of organic silicone and containing aplatinum catalyst

S08: Dispense a protection structure 15 to the base 10 and cover theencapsulation structure 14. Wherein, the encapsulation structure 14 hasa hardness lower than the hardness of the protection structure 15. Tocombine the protection structure 15 with the encapsulation structure 14securely and prevent the heterogeneous materials from affecting thelight emission effect, the protection structure 15 may be made of amaterial selected from the organic silicone. To achieve the moisture andoxygen resisting performance, the protection structure 15 comes with ahardness falling within a range of D60-D80. The structure and technicalcharacteristics of the LED light source 1 manufactured by theaforementioned method have been described in the above paragraphs andillustrated by FIGS. 1 to 8. Wherein, the protection structure 15 isinstalled at the upper edge 101 of the base 10 by a dispensing methodand the protection structure 15 has an area greater than the area of thelight emitting region A (as shown in FIGS. 1, 3, 4 and 6-7), or theupper edge 101 of the base 10 is formed into a stepped shape (as shownin FIGS. 5 and 8). These arrangements can effectively support theprotection structure 15, so that the protection structure 15 will notpress or damage the encapsulation structure 14 with a lower hardness.

The protection structure 15 further comprises a plurality of uniformlight particles 16 scattered in the protection structure 15, wherein theuniform light particle 16 is selected from the group consisting of SiO₂,BN, Al₂O₃, and TiO₂ or a combination thereof, and the uniform lightparticles 16 are added to enhance the light color uniformity of the LEDlight source 1. Preferably, the uniform light particles 16 relative tothe protection structure 15 has a weight percentage concentrationfalling within a range of 5%-15% to prevent the uniform light particles16 with a too-low weight percentage concentration from causing anon-uniform light effect or the uniform light particles 16 with atoo-high weight percentage concentration from causing an insufficientbrightness. Please refer to the description above for the measurementresults with regard to the light output performance of the uniform lightparticles 16 doped with different weight percentage concentrations.

In a specific application, the LED light source 1 may be configured indifferent ways and mixed to produce a white light. In FIG. 2 or 6, theLED chip 11 has a light emission wavelength falling within a range of400-460 nm, and the light excitation structure 13 comprises a greenfluorescent powder 131 and a first red fluorescent powder 132, and thegreen fluorescent powder 131 contains sulfur, and the first redfluorescent powder 132 does not contain sulfur. Wherein, the first redfluorescent powder 132 is selected from the group consisting ofT₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is an element selectedfrom the group consisting of Li, Na, K, and Rb, and X is an elementselected from the group consisting of Ge, Si, Sn, Zr, and Ti; M is anelement selected from the group consisting of Ca, Sr, and Ba.Preferably, the green fluorescent powder 131 has a spectral half-wavewidth of 20-40 nm or 40-60 nm, and the first red fluorescent powder 132has a spectral half-wave width falling within a range of 2-7 nm or 75-95nm. The light emitted from the LED chip 11, the green light excited andemitted by the green fluorescent powder 131, and the red light andexcited and emitted by the first red fluorescent powder 132 are mixed toform a white light. In FIG. 3 or 7, the LED chip 11 has a light emissionwavelength falling within a range of 400-460 nm, and the lightexcitation structure 13 comprises a green fluorescent powder 131 and asecond red fluorescent powder 133, and the green fluorescent powder 131contains sulfur, and the second red fluorescent powder 133 also containssulfur. Wherein, the second red fluorescent powder 133 is selected fromthe group consisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a redquantum dot. Preferably, the green fluorescent powder 131 has a spectralhalf-wave width of 20-40 nm or 40-60 nm, and the second red fluorescentpowder 133 has a spectral half-wave width of 20-40 nm or 55-75 nm. Thesulfur-containing green fluorescent powder 131 and second redfluorescent powder 133 can enhance the light color performance of theLED light source 1. In FIG. 4, the LED chip 11 has a light emissionwavelength falling within a range of 400-460 nm, and the lightexcitation structure 13 comprises a green fluorescent powder 131, afirst red fluorescent powder 132 and a second red fluorescent powder133, and the green fluorescent powder 131 contains sulfur, and the firstred fluorescent powder 132 does not contain sulfur, and the second redfluorescent powder 133 contains sulfur. Wherein, the first redfluorescent powder 132 is selected from the group consisting ofT₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is an element selectedfrom the group consisting of Li, Na, K, and Rb, and X is an elementselected from the group consisting of Ge, Si, Sn, Zr, and Ti; and M isan element selected from the group consisting of Ca, Sr, and Ba, thesecond red fluorescent powder 133 is selected from the group consistingof CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot. Preferably,the green fluorescent powder 131 has a spectral half-wave width of 20-40nm or 40-60 nm, and the first red fluorescent powder 132 has a spectralhalf-wave width of 2-7 nm or 75-95 nm, and the second red fluorescentpowder 133 has a spectral half-wave width of 20-40 nm or 55-75 nm. Bythe configuration having two mixed red fluorescent powders, theafterimage of the red light can be reduced effectively to furtherimprove the light output performance of the LED light source 1.

In FIG. 4, the LED chip 11 comes with a plural quantity, and the LEDchips 11 include a chip with a light emission wavelength falling withina range of 400-460 nm and a green chip, and the light excitationstructure 13 comprises a second red fluorescent powder 133, and thesecond red fluorescent powder 133 contains sulfur. Wherein, the secondred fluorescent powder 133 is selected from the group consisting ofCaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot. Preferably, thesecond red fluorescent powder 133 has a spectral half-wave width of20-40 nm or 55-75 nm. The LED light source 1 produces a white light bymixing the light of the LED chip 11, the red light excited and formed bythe second red fluorescent powder 133, and provides a good white lightexpression. In FIGS. 5 and 8, the LED chip 11 comes with a pluralquantity and the LED chips 11 include a chip with a light emissionwavelength falling within a range of 400-460 nm and a green chip, andthe light excitation structure 13 comprises a first red fluorescentpowder 132 and a second red fluorescent powder 133, and the first redfluorescent powder 132 does not contain sulfur, and the second redfluorescent powder 133 contains sulfur. Wherein, the first redfluorescent powder 132 is selected from the group consisting ofT₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is an element selectedfrom the group consisting of Li, Na, K, and Rb, and X is an elementselected from the group consisting of Ge, Si, Sn, Zr, and Ti; M is anelement selected from the group consisting of Ca, Sr, and Ba, and thesecond red fluorescent powder 133 is selected from the group consistingof is selected from the group consisting of CaS:Eu²⁺, SrS:Eu²⁺,Ba₂ZnS₃:Mn²⁺, and a red quantum dot. Preferably, the first redfluorescent powder 132 has a spectral half-wave width falling within arange of 2-7 nm or 75-95 nm, and the second red fluorescent powder 133has a spectral half-wave width of 20-40 nm or 55-75 nm. Thesulfur-containing or non-sulfur-containing red fluorescent powder caneffectively reduce the afterimage caused by the red light and improvethe light output performance of the LED light source 1. Besides theaforementioned materials, the materials described in the embodimentsabove may be used as the green fluorescent powder 131, the first redfluorescent powder 132 and the second red fluorescent powder 133.

The LED light source 1 manufactured by the aforementioned manufacturingmethod and the conventional LED 9 are compared, and the experiment andcomparison results are similar to those listed in Tables 1 to 3, so thatthe LED light source 1 manufactured by this method can effectivelyimprove the light emission brightness and the light color attenuationduring the LED manufacturing process in a high-temperature furnace bythe SMTRST. On the other hand, Tables 4 to 6 and the correspondingcontents may be used as a reference of the output light color andbrightness result and the overall uniformity of the output light colordistribution detected at different angles after the uniform lightparticles 16 of different weight percentage concentrations are added.The detected results show that the uniformity of the light colordistribution of the LED light source 1 can be enhanced effectively afterthe uniform light particles 16 are added

With reference to FIG. 10 for an exploded view of a direct displaydevice of this disclosure as well as FIGS. 1 to 8, the direct displaydevice 2 comprises a display module 20 and a backlight module 21, andthe backlight module 21 is installed on a side of the display module 20and includes a circuit board 211 and a plurality of LED light sources 1.The LED light sources 1 are installed on the circuit board 211 andcomprise a base 10, at least an LED chip 11, an anti-vulcanizationstructure 12, a light excitation structure 13, an encapsulationstructure 14 and a protection structure 15. The structure and connectionof each of the LED light sources 1 have been described above, and thuswill not be repeated. Wherein, the LED chip 11 is installed at thebottom position of the inner mounting surface 102 by a flip chip method,or a method of combining two metal wire bonds 17. When the LED chip 11is installed by the flip chip method, the anti-vulcanization structure12 is continuously and uninterruptible formed at the reflective layer1021 and a surface of the LED chip 11; and when the LED chip 11 isinstalled by the method of combining the metal wire bonds 17, theanti-vulcanization structure 12 is continuously and uninterruptibleformed at the reflective layer 1021, the metal wire bonds 17 and asurface of the LED chip 11, so as to protect the metal material in thebase 10 and prevent them from being affected by the sulphur compositionto produce vulcanization. Please refer to the content of the embodimentsabove for the same remaining technical characteristics

If the LED applied to a conventional direct display device has atoo-large deviation of its output light color, optical components suchas lenses are required to be added to the LED by secondary optics. As aresult, the required cost and the difficulty of assembling thecomponents are increased, and LED may have a yellow-ring light outputcaused by the secondary optical amplification effect of the lenses.Further, a dense arrangement of LEDs may overcome the large deviation ofthe light color, but the LED situated at a too-close position may causea hot-spot light output and non-uniform brightness. In summation of thecontents of the aforementioned embodiments, the light excitationstructure containing sulfur, lead, or phosphorus can be packaged intothe LED light source 1 perfectly, and the vulcanization of the metalmaterial in the base 10 caused by the sulphur composition can bereduced. In addition, the protection structure 15 can effectivelyovercome the issues of the catalyst poison caused by the aforementionedcompositions and the insufficient hardness of the encapsulationstructure 14 to improve the light color performance and the light outputperformance of the LED light source 1. Since the single LED light source1 can provide an excellent light output performance, therefore the LEDlight source 1 applied to the direct display device 2 has an excellentlight output effect, and the required quantity of the LED light sources1 can be reduced significantly and the manufacturing cost can be loweredeffectively. This disclosure also reduces the different colorphenomenon, allows the direct display device 2 to have a high contrastscreen, and prevent non-uniform colors in a single area, so as toenhance the light output quality greatly

Preferably, each of the LED light sources 1 further comprises aplurality of uniform light particles 16 distributed in the protectionstructure 15, and the uniform light particle 16 is selected from thegroup consisting of SiO₂, BN, Al₂O₃, and TiO₂ or a combination thereof.Preferably, the uniform light particles relative to the protectionstructure has a weight percentage concentration falling within a rangeof 5%-15%. The addition of the uniform light particles 16 furtherenhances the uniformity of the light color distribution of the outputlight of the LED light sources 1, and the direct display device 2 canfurther eliminate the different color issue to provide a product withbetter light color distribution performance. Please refer to Tables 4 to6, and the corresponding contents of the first embodiment for the lightcolor after the uniform light particles 16 are added and the brightnesstesting result.

Please refer to the aforementioned embodiments for additional technicalcharacteristics of the direct display device 2. For example, theprotective material 15 may be one selected organic silicone to improvethe bonding strength of the encapsulation structure 14 and prevent theheterogeneous materials from affecting the optics. To achieve a goodmoisture and oxygen resisting performance, the protection structurecomes with a hardness falling within a range of D60-D80. To improve thelight output performance of the LED light source 1, the base 10 is madeof a transparent material. To prevent the protection structure 15 frompressing and damaging the encapsulation structure 14 with a lowerhardness, the protection structure 15 is installed at the upper edge 101of the base 10 by a dispensing method, and the protection structure 15has an area greater than the area of the light emitting region A.Further, the upper edge 101 of the base 10 is formed in a stepped shapeto facilitate the installation of the protection structure 15. When theLED chip 11 is installed by a flip chip method, the encapsulationstructure 14 has a hardness preferably falling within a range ofD40-D60; and when the LED chip 11 is installed by the method ofcombining the metal wire bonds 17, the encapsulation structure 14 has ahardness preferably falling within a range of D20-D40. The remainingtechnical characteristics have been described in details above, and thuswill not be repeated.

In a specific application, each of the LED light sources 1 of the directdisplay device is shown in FIG. 2 or 5, and the LED chip 11 has a lightemission wavelength falling within a range of 400-460 nm, and the lightexcitation structure 13 comprises a green fluorescent powder 131 and afirst red fluorescent powder 132, and the green fluorescent powder 131contains sulfur, and the first red fluorescent powder 132 does notcontain sulfur. Wherein, the first red fluorescent powder 132 isselected from the group consisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, andCaAlSiN₃:Eu²⁺; T is an element selected from the group consisting of Li,Na, K, and Rb, and X is an element selected from the group consisting ofGe, Si, Sn, Zr, and Ti; M is an element selected from the groupconsisting of Ca, Sr, and Ba. Preferably, the green fluorescent powder131 has a spectral half-wave width of 20-40 nm or 40-60 nm, and thefirst red fluorescent powder 132 has a spectral half-wave width fallingwithin a range of 2-7 nm or 75-95 nm. The light of the LED chip 11, thegreen light excited and emitted by the green fluorescent powder 131, andthe red light excited and formed by the first red fluorescent powder 132are mixed to form a white light. In FIG. 3 or 7, the LED chip 11 has alight emission wavelength falling within a range of 400-460 nm, and thelight excitation structure 13 comprises a green fluorescent powder 131and a second red fluorescent powder 133, and the green fluorescentpowder 131 contains sulfur, and the second red fluorescent powder 133also contains sulfur. Wherein, the second red fluorescent powder 133 isselected from the group consisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺,and a red quantum dot. Preferably, the green fluorescent powder 131 hasa spectral half-wave width of 20-40 nm or 40-60 nm, and the second redfluorescent powder 133 has a half-wave width of 20-40 nm or 55-75 nm.The sulfur-containing green fluorescent powder 131 and second redfluorescent powder 133 can improve the light color performance of theLED light source 1. Alternatively, the LED chip 11 has a light emissionwavelength falling within a range of 400-460 nm, and the lightexcitation structure 13 comprises a green fluorescent powder 131, afirst red fluorescent powder 132 and a second red fluorescent powder133, and the green fluorescent powder 131 contains sulfur, and the firstred fluorescent powder 132 does not contain sulfur, and the second redfluorescent powder 133 contains sulfur. Wherein, the first redfluorescent powder 132 is selected from the group consisting ofT₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is an element selectedfrom the group consisting of Li, Na, K, and Rb, and X is an elementselected from the group consisting of Ge, Si, Sn, Zr, and Ti; M is anelement selected from the group consisting of Ca, Sr, and Ba, the secondred fluorescent powder 133 is selected from the group consisting ofCaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot. Preferably, thegreen fluorescent powder 131 has a spectral half-wave width of 20-40 nmor 40-60 nm, the first red fluorescent powder 132 has a spectralhalf-wave of 2-7 nm or 75-95 nm, and the second red fluorescent powder133 has a spectral half-wave width of 20-40 nm or 55-75 nm. Theconfiguration by mixing two types of red fluorescent powders caneffectively reduce the afterimage caused by the red light and improvethe light output performance of the LED light source 1.

In FIG. 4, the LED chip 11 comes with a plural quantity, and the LEDchips 11 include a chip with a light emission wavelength falling withina range of 400-460 nm and a green chip, and the light excitationstructure 13 comprises a second red fluorescent powder 133, and thesecond red fluorescent powder 133 contains sulfur. Wherein, the secondred fluorescent powder 133 is selected from the group consisting ofCaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot. Preferably, thesecond red fluorescent powder 133 has a spectral half-wave width of20-40 nm or 55-75 nm. The LED light source 1 can mix the light emittedby the LED chip 11 and the red light excited and emitted by the secondred fluorescent powder 133 to produce a white light, so that the LEDlight source 1 has a good white light expression. In FIGS. 5 and 8, whenthe LED chip 11 comes with a plural quantity and the LED chips 11include a blue chip and a green chip, the light excitation structure 13comprises a first red fluorescent powder 132 and a second redfluorescent powder 133, and the first red fluorescent powder 132 doesnot contain sulfur, and the second red fluorescent powder 133 containssulfur. Wherein, the first red fluorescent powder 132 is selected fromthe group consisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; Tis an element selected from the group consisting of Li, Na, K, and Rb,and X is an element selected from the group consisting of Ge, Si, Sn,Zr, and Ti; M is an element selected from the group consisting of Ca,Sr, and Ba, the second red fluorescent powder 133 is selected from thegroup consisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantumdot. Preferably, the first red fluorescent powder 132 has a spectralhalf-wave width of 2-7 nm or 75-95 nm, and the second red fluorescentpowder 133 has a spectral half-wave width of 20-40 nm or 55-75 nm. Thesulfur-containing or non-sulfur-containing red fluorescent powder caneffectively reduce the afterimage caused by the red light and improvethe light output performance of the LED light source 1. Besides thematerials described above, the green fluorescent powder 131, the firstred fluorescent powder 132 and the second red fluorescent powder 133 maybe any material described in the embodiments above, and thus will not berepeated.

In summation of the description above, this disclosure discloses an LEDlight source, an LED light source manufacturing method and their directdisplay device, and the LED light source can package the fluorescentpowder containing sulfur, lead, or phosphorus and having a good lightcolor performance and use the continuous and uninterruptibleanti-vulcanization structure to effectively eliminate the vulcanizationof the metal material caused by the sulphur composition. Since theencapsulation structure produces a catalyst poison due to theaforementioned compositions, the protection issue of the LED chip andthe light excitation structure can be overcome by the protectionstructure effectively. The protection structure allows the encapsulationstructure with a lower hardness to package and fix the light excitationstructure and the LED chip without worrying about a too-low hardnessthat reduces the protection performance for the moisture and oxygenresistance and improves the light color expression and the light outputperformance of the LED light source. When the LED light source isapplied to a direct display device, the quantity of LED light sources ofthis disclosure can be reduced significantly to lower the material andmanufacturing costs, while reducing the different color phenomenon toimprove the light output quality.

What is claimed is:
 1. An LED light source manufacturing method,comprising the steps of: providing a base having an upper edge, a lightemitting region formed and enclosed by the upper edge, and an innermounting surface inwardly and concavely formed on the base along theupper edge; forming a reflective layer on the inner mounting surface;providing at least an LED chip installed at a bottom position of theinner mounting surface by a flip chip method or combining two metal wirebonds by a solid crystallization method; injecting a low-viscosity andhigh-volatilization anti-vulcanization solvent to the inner mountingsurface of the base, so that the anti-vulcanization solvent completelycovers all metal materials on the inner mounting surface; resting orheating to volatize the anti-vulcanization solvent to form ananti-vulcanization structure, and the anti-vulcanization structure beingin a continuous and uninterruptible thin film state; providing a lightexcitation structure including at least a fluorescent powder containingone selected from the group consisting of sulfur, lead, and phosphorus,and the light excitation structure being installed in the base;packaging the light excitation structure and the LED chip by anencapsulation structure, and the anti-vulcanization structure isolatingall metal materials on the inner mounting surface from directlycontacting with the encapsulation structure, and the encapsulationstructure being made of organic silicone and containing a platinumcatalyst; and dispensing a protection structure to the base and coveringthe encapsulation structure; wherein the encapsulation structure has ahardness lower than a hardness of the protection structure, wherein theprotection structure further comprises a plurality of uniform lightparticles scattered in the protection structure, and the uniform lightparticle is selected from the group consisting of SiO₂, BN, Al₂O₃, andTiO₂ or a combination thereof, the LED chip has a light emissionwavelength falling within a range of 400-460 nm, and the lightexcitation structure comprises a green fluorescent powder, a first redfluorescent powder and a second red fluorescent powder, and the greenfluorescent powder contains sulfur, and the first red fluorescent powderdoes not contain sulfur, and the second red fluorescent powder containssulfur; the first red fluorescent powder is selected from the groupconsisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; T is selectedfrom the group consisting of Li, Na, K, and Rb, and X is selected fromthe group consisting of Ge, Si, Sn, Zr, and Ti; and M is selected fromthe group consisting of Ca, Sr, and Ba; and the second red fluorescentpowder is selected from the group consisting of CaS:Eu²⁺, SrS:Eu²⁺,Ba₂ZnS₃:Mn²⁺, and a red quantum dot.
 2. The LED light sourcemanufacturing method of claim 1, wherein the uniform light particlerelative to the protection structure has a weight percentageconcentration falling within a range of 5%-15%.
 3. The LED light sourcemanufacturing method of claim 2, wherein the protection structure ismade of a material selected from organic silicone.
 4. The LED lightsource manufacturing method of claim 3, wherein the encapsulationstructure has a hardness preferably falling within a range of D40-D60when the LED chip is installed at a bottom position of the innermounting surface by a flip chip method.
 5. The LED light sourcemanufacturing method of claim 4, wherein the protection structure has ahardness falling within a range of D60-D80.
 6. The LED light sourcemanufacturing method of claim 5, wherein when the anti-vulcanizationsolvent is heated and volatilized, the heating temperature is lower than150° C.
 7. The LED light source manufacturing method of claim 6, whereinthe base is made of a transparent material.
 8. The LED light sourcemanufacturing method of claim 7, wherein the protection structure isinstalled at the upper edge of the base by a dispensing method, and theprotection structure has an area greater than an area of the lightemitting region.
 9. The LED light source manufacturing method of claim8, wherein the upper edge of the base is formed into a stepped shape.10. The LED light source manufacturing method of claim 3, wherein theencapsulation structure has a hardness preferably falling within a rangeof D20-D40 when the LED chip is installed at a bottom position of theinner mounting surface by a solid crystallization of the metal wirebonds.
 11. The LED light source manufacturing method of claim 10,wherein the protection structure has a hardness falling within a rangeof D60-D80.
 12. The LED light source manufacturing method of claim 11,wherein the anti-vulcanization structure has a thickness falling withina range of 2-10 μm.
 13. The LED light source manufacturing method ofclaim 12, wherein when the anti-vulcanization solvent is heated andvolatilized, the heating temperature is lower than 150° C.
 14. The LEDlight source manufacturing method of claim 13, wherein the base is madeof a transparent material.
 15. The LED light source manufacturing methodof claim 14, wherein the protection structure is installed at the upperedge of the base by a dispensing method, and the protection structurehas an area greater than an area of the light emitting region.
 16. TheLED light source manufacturing method of claim 15, wherein the upperedge of the base is formed into a stepped shape.
 17. An LED light sourcemanufacturing method, comprising the steps of: providing a base havingan upper edge, a light emitting region formed and enclosed by the upperedge, and an inner mounting surface inwardly and concavely formed on thebase along the upper edge; forming a reflective layer on the innermounting surface; providing at least an LED chip installed at a bottomposition of the inner mounting surface by a flip chip method orcombining two metal wire bonds by a solid crystallization method;injecting a low-viscosity and high-volatilization anti-vulcanizationsolvent to the inner mounting surface of the base, so that theanti-vulcanization solvent completely covers all metal materials on theinner mounting surface; resting or heating to volatize theanti-vulcanization solvent to form an anti-vulcanization structure, andthe anti-vulcanization structure being in a continuous anduninterruptible thin film state; providing a light excitation structureincluding at least a fluorescent powder containing one selected from thegroup consisting of sulfur, lead, and phosphorus, and the lightexcitation structure being installed in the base; packaging the lightexcitation structure and the LED chip by an encapsulation structure, andthe anti-vulcanization structure isolating all metal materials on theinner mounting surface from directly contacting with the encapsulationstructure, and the encapsulation structure being made of organicsilicone and containing a platinum catalyst and dispensing a protectionstructure to the base and covering the encapsulation structure; whereinthe encapsulation structure has a hardness lower than a hardness of theprotection structure, wherein the protection structure further comprisesa plurality of uniform light particles scattered in the protectionstructure, and the uniform light particle is selected from the groupconsisting of SiO₂, BN, Al₂O₃, and TiO₂ or a combination thereof, theLED chip comes with a plural quantity, and the LED chips include a chipwith a light emission wavelength falling within a range of 400-460 nmand a green chip, and the light excitation structure includes a secondred fluorescent powder, and the second red fluorescent powder containssulfur; and the second red fluorescent powder is selected from the groupconsisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot.18. The LED light source manufacturing method of claim 17, wherein theuniform light particle relative to the protection structure has a weightpercentage concentration falling within a range of 5%-15%.
 19. The LEDlight source manufacturing method of claim 18, wherein the protectionstructure is made of a material selected from organic silicone.
 20. AnLED light source manufacturing method, comprising the steps of:providing a base having an upper edge, a light emitting region formedand enclosed by the upper edge, and an inner mounting surface inwardlyand concavely formed on the base along the upper edge; forming areflective layer on the inner mounting surface; providing at least anLED chip installed at a bottom position of the inner mounting surface bya flip chip method or combining two metal wire bonds by a solidcrystallization method; injecting a low-viscosity andhigh-volatilization anti-vulcanization solvent to the inner mountingsurface of the base, so that the anti-vulcanization solvent completelycovers all metal materials on the inner mounting surface; resting orheating to volatize the anti-vulcanization solvent to form ananti-vulcanization structure, and the anti-vulcanization structure beingin a continuous and uninterruptible thin film state; providing a lightexcitation structure including at least a fluorescent powder containingone selected from the group consisting of sulfur, lead, and phosphorus,and the light excitation structure being installed in the base;packaging the light excitation structure and the LED chip by anencapsulation structure, and the anti-vulcanization structure isolatingall metal materials on the inner mounting surface from directlycontacting with the encapsulation structure, and the encapsulationstructure being made of organic silicone and containing a platinumcatalyst and dispensing a protection structure to the base and coveringthe encapsulation structure; wherein the encapsulation structure has ahardness lower than a hardness of the protection structure, wherein theprotection structure further comprises a plurality of uniform lightparticles scattered in the protection structure, and the uniform lightparticle is selected from the group consisting of SiO₂, BN, Al₂O₃, andTiO₂ or a combination thereof, the LED chip comes with a pluralquantity, and the LED chips include a chip with a light emissionwavelength falling within a range of 400-460 nm and a green chip, andthe light excitation structure comprises a first red fluorescent powderand a second red fluorescent powder, and the first red fluorescentpowder does not contain sulfur, and the second red fluorescent powdercontains sulfur; and the first red fluorescent powder is selected fromthe group consisting of T₂XF₆:Mn⁴⁺, M₂Si₅N₈:Eu²⁺, and CaAlSiN₃:Eu²⁺; Tis an element selected from the group consisting of Li, Na, K, and Rb; Xis an element selected from the group consisting of Ge, Si, Sn, Zr andTi; M is an element selected from the group consisting of Ca, Sr, andBa; and the second red fluorescent powder is selected from the groupconsisting of CaS:Eu²⁺, SrS:Eu²⁺, Ba₂ZnS₃:Mn²⁺, and a red quantum dot.21. The LED light source manufacturing method of claim 20, wherein theuniform light particle relative to the protection structure has a weightpercentage concentration falling within a range of 5%-15%.
 22. The LEDlight source manufacturing method of claim 21, wherein the protectionstructure is made of a material selected from organic silicone.